摘要
While flexible thermoelectric materials hold promise for wearable electronics, the low performance of films and the inefficiency of devices fundamentally restrict their practical applications. Herein, we have presented a microstructure engineering strategy to fabricate high-performance Ag2Se films. Via regulation of the grain-growth process, Ag2Se grains with large sizes are obtained, in which the carrier mobility is significantly enhanced to up to ∼1300 cm2 V−1 s−1 at room temperature due to the reduced electron scattering, and low-angle grain boundaries are developed, with the room-temperature lattice thermal conductivity decreasing to 0.26 W m−1 K−1 because of the increased mid-frequency phonon scattering, thus partially decoupling the electrical and thermal properties. Benefiting from this, a high ZT of 1.15 is achieved at 300 K. Using these films, a flexible and wearable thermoelectric generator incorporating 100 pairs of thermoelectric legs was successfully developed. In the generator, a sputtering Ag buffer layer was introduced to reduce the contact resistance and interfacial reaction. As a result, this thermoelectric generator exhibits an ultra-high normalized power density of ∼9.09 μW m−1 K−2, which is also the current record-breaking value among thermoelectric film devices. The superior performance allows the thermoelectric generator to power various portable electronics, including LED lights, wristwatches, and, particularly, smartphones. This work establishes a generalizable framework for developing high-performance and manufacturable thermoelectric materials and devices, narrowing the gap between laboratory breakthroughs and industrial adoption in wearable energy harvesting.
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