摘要
All-inorganic CsPbX 3 (X = Cl, Br, I) quantum dots (QDs) exhibit exceptional optical properties, narrow full-width-at-half-maximum (FWHM) fluorescence emissions, and straightforward synthesis, rendering them great potential for applications in display, solid-state lighting, and related fields. However, their practical utilization was significantly hindered by rapid degradation and luminescence quenching. A robust strategy to enhance stability involves encapsulating QDs within a glass matrix via in situ crystallization. Concurrently, rare earth (RE) doping has emerged as an effective approach to optimize the optical performance of CsPbBr 3 perovskite QD-embedded glasses. Investigating the crystallization behavior of RE-doped CsPbBr 3 borosilicate glasses is crucial for advancing the development of high-performance RE-doped perovskite glass materials. Building upon this foundation, Tm 2 O 3 -doped CsPbBr 3 QD glass-ceramics with varying dopant concentrations were successfully fabricated. The incorporation of Tm 3+ ions modulated QD dimensions and bandgap structures, suppressed VBr defects, and potentially established energy transfer pathways, effectively enhancing the optical performance of the QDs. Compared with undoped counterparts, the optimized sample demonstrated a 118.83% enhancement in photoluminescence (PL) intensity, a photoluminescence quantum yield (PLQY) increased from 20.6% to 37.76%, and an extended fluorescence lifetime from 198.83 ns to 225.06 ns. Furthermore, encapsulation within the borosilicate glass matrix significantly improved the temporal stability, aqueous stability, thermal stability, and photostability of CsPbBr 3 QDs. These superior properties position Tm 3+ -doped CsPbBr 3 QDs@glass composites as ideal candidates for high-performance lighting, wide-color-gamut displays, and fingerprint recognition technologies.
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