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Highly Stretchable Synaptic Transistors Based On Phase-Separated P3HT–SEBS Networks for Adaptative Neuromorphic Computation

Journal 2025 · IF 4.7 · 发表于 2025 年 8 月 27 日
作者: Jiale Huang,Linfeng Lan,Bo Huang,Jiayi Pan,Baozhong Chen,Qi Zhou,Huimin Su,Jintao Xu,Jiajun Lin,Yutian Liu,Yang Lu,Simeng Gong,Junbiao Peng
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摘要

Recent advancements in organic electronics highlight the potential of stretchable organic field-effect transistors for neuromorphic applications. However, maintaining a high electrical performance under mechanical strain remains a critical challenge. Here, we present a stretchable organic synaptic transistor with a phase-separating method. By blending poly(3-hexylthiophene) (P3HT) with styrene–ethylene–butylene–styrene (SEBS), P3HT–SEBS phase-separated films were obtained that combine high mechanical stretchability with good charge transport property. The organic synaptic transistors (OSTs) were able to withstand a mechanical strain of greater than 80%. Remarkably, by combining SEBS-induced stress dissipation with ionic gel-driven synaptic modulation, the OSTs were able to mimic synaptic dynamics under strain, facilitating neurobiological behaviors. Our work addresses the critical need for strain-resilient organic devices in next-generation human–machine collaboration.

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