Complementary memristor based on Al/TiO2/graphene oxide/indium tin oxides Resistive Random Access Memory by spin-coating techniques

The resistive properties and mechanisms of devices with different structures were investigated by fabricating TiO 2 and Graphene Oxide (GO) films on Indium Tin Oxides (ITO)conductive glass using spin-coating techniques. The results show that our prepared devices can undergo SET/RESET under different voltages and exhibit unique resistive change characteristics. In addition, we found a complementary resistive switching (CRS) behavior in the Al/TiO 2 /GO/ITO structured devices, similar to the memristor which is reverse-series connection of Al/TiO 2 /ITO and Al/GO/ITO. And its resistive behavior is analogous to neuronal firing processes-depolarizing and polarizing behavior. Furthermore, the resistance is modulated by constant voltage and the stimulus gets gradual resistance increase (long-term depression, LTD), and causes progressive resistance decrease (long-term potentiation, LTP). This study provides a reference for the application of the synergistic combination of CRS behavior and tunable resistance states enables a dual-path approach for implementing neuronal and synaptic functionalities in bio-inspired electronics, offering a reference framework for complementary memristor-based bionic neurons that broadens the application scope of Resistive Random Access Memory.