摘要
Metal-halide perovskites are promising light-emitter candidates for next-generation light-emitting diodes (LEDs) 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 . Achieving high brightness and efficiency simultaneously in pure-red perovskite LEDs (PeLEDs) is an ongoing goal 9 , 10 . Three-dimensional (3D) CsPbI 3- x Br x emitters have excellent carrier transport capability and high colour purity, which could allow efficient and ultrabright pure-red PeLEDs. However, such devices are prone to efficiency roll-off, resulting in low efficiency and low brightness under high current density. Here, by using electrically excited transient absorption spectroscopy, we discovered the efficiency roll-off was induced by hole leakage. Therefore, we developed a CsPbI 3- x Br x intragrain heterostructure containing narrow bandgap emitters and wide bandgap barriers to confine the injected carriers. The wide bandgap barrier was incorporated by introducing strongly bonding molecules into the [PbX 6 ] 4− framework to expand the 3D CsPbI 3- x Br x lattice. This strategy resulted in bright and efficient pure-red PeLEDs, with a high brightness of 24,600 cd m −2 , maximum external quantum efficiency of 24.2% and low efficiency roll-off, maintaining a 10.5% external quantum efficiency at a high luminance of 22,670 cd m −2 .
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