摘要
Dielectric-based energy storage capacitors characterized with fast charging and discharging speed and reliability 1 , 2 , 3 , 4 play a vital role in cutting-edge electrical and electronic equipment. In pursuit of capacitor miniaturization and integration, dielectrics must offer high energy density and efficiency 5 . Antiferroelectrics with antiparallel dipole configurations have been of significant interest for high-performance energy storage due to their negligible remanent polarization and high maximum polarization in the field-induced ferroelectric state 6 , 7 , 8 . However, the low antiferroelectric–ferroelectric phase-transition field and accompanying large hysteresis loss deteriorate energy density and reliability. Here, guided by phase-field simulations, we propose a new strategy to frustrate antipolar ordering in antiferroelectrics by incorporating non-polar or polar components. Our experiments demonstrate that this approach effectively tunes the antiferroelectric–ferroelectric phase-transition fields and simultaneously reduces hysteresis loss. In PbZrO 3 -based films, we hence realized a record high energy density among all antiferroelectrics of 189 J cm −3 along with a high efficiency of 81% at an electric field of 5.51 MV cm −1 , which rivals the most state-of-the-art energy storage dielectrics 9 , 10 , 11 , 12 . Atomic-scale characterization by scanning transmission electron microscopy directly revealed that the dispersed non-polar regions frustrate the long-range antipolar ordering, which contributes to the improved performance. This strategy presents new opportunities to manipulate polarization profiles and enhance energy storage performances in antiferroelectrics.
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