Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility

The growth of high-quality single-crystalline Te nanobelts is reported by introducing atomically flat hexagonal boron nitride (h-BN) nanoflakes into the chemical vapor deposition system as the growth substrate. The field-effect transistor based on Te grown on h-BN exhibits an ultrahigh hole mobility up to 1370 cm 2  V −1  s −1 at room temperature.