Ultrahigh thermoelectric properties of p-type BixSb2−xTe3 thin films with exceptional flexibility for wearable energy harvesting

Use of a flexible thermoelectric source is a feasible approach to realizing self-powered wearable electronics and the Internet of Things. Inorganic thin films are promising candidates for fabricating flexible power supply, but obtaining high-thermoelectric-performance thin films remains a big challenge. In the present work, a p -type Bi x Sb 2− x Te 3 thin film is designed with a high figure of merit of 1.11 at 393 K and exceptional flexibility (less than 5% increase in resistance after 1000 cycles of bending at a radius of ∼5 mm). The favorable comprehensive performance of the Bi x Sb 2− x Te 3 flexible thin film is due to its excellent crystallinity, optimized carrier concentration, and low elastic modulus, which have been verified by experiments and theoretical calculations. Further, a flexible device is fabricated using the prepared p -type Bi x Sb 2− x Te 3 and n -type Ag 2 Se thin films. Consequently, an outstanding power density of ∼1028 μW cm −2 is achieved at a temperature difference of 25 K. This work extends a novel concept to the fabrication of high-performance flexible thin films and devices for wearable energy harvesting.