摘要
Both semiconductors and scintillators have their own advantages in direct and indirect X-ray detection, respectively. However, they are also limited by their intrinsic properties and detection mechanisms. Here, a low-cost and large-area flat X-ray detector is reported by combining a cesium silver bismuth bromide (Cs 2 AgBiBr 6 ) perovskite semiconductor with a ethylenebis-triphenylphosphonium manganese (II) bromide ((C 38 H 34 P 2 )MnBr 4 ) scintillator through fast tableting processes. Cs 2 AgBiBr 6 and (C 38 H 34 P 2 )MnBr 4 can attenuate the X-ray photons to induce charge carriers that are collected through the continuous Cs 2 AgBiBr 6 grains. (C 38 H 34 P 2 )MnBr 4 blocks the Cs 2 AgBiBr 6 ions migration paths at the grain boundaries to reduce the device dark current/noise and improves the working stability. Most charges generated by (C 38 H 34 P 2 )MnBr 4 are transferred to the adjacent Cs 2 AgBiBr 6 , and recombined charges radiate light through scintillation, which will be further absorbed by the surrounding Cs 2 AgBiBr 6 perovskite, and further induce collectable charges for indirect X-ray detection, avoiding the unwanted light scattering, self-absorption, or afterglow effects of scintillators. The hybrid X-ray detector displays a high sensitivity of 114 µC Gy air −1 cm −2 to 120 keV p hard X-rays with a lowest detectable dose rate of 0.2 μGy air s −1 , showing 75 times lower detection limit compared to (C 38 H 34 P 2 )MnBr 4 scintillator, which provides a new path for X-ray flat-panel design.
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