摘要
Bi 2 S 3 -based thermoelectric materials without toxic and expensive elements have a high Seebeck coefficient and intrinsic low thermal conductivity. However, Bi 2 S 3 suffers from low electrical conductivity, which makes it a less-than-perfect thermoelectric material. In this work, halogen elements F, Cl, and Br from halogen acid are successfully introduced into the Bi 2 S 3 lattice using a hydrothermal procedure to efficiently improve the carrier concentration. Compared with the pure sample, the electron concentration of the Bi 2 S 3 sample treated with HCl is increased by two orders of magnitude. An optimal power factor of 470 µW m −1 K −2 for the Bi 2 S 2.96 Cl 0.04 sample at 673 K is obtained. Density functional theory calculations reveal that an effective delocalized electron conductive network forms after Cl doping, which raises the Fermi level into the conduction bands, thus generating more free electrons and improving the conductivity of the Bi 2 S 3 -based materials. Ultimately, an excellent ZT of ≈0.8 is achieved at 673 K for the Bi 2 S 2.96 Cl 0.04 sample, which is one of the highest values reported for a state-of-the-art Bi 2 S 3 system. The energy conversion efficiency of the module reaches 2.3% at 673 K with a temperature difference of 373 K. This study offers a new method for enhancing the thermoelectric properties of Bi 2 S 3 by adding halogen acid in the hydrothermal process for powder synthesis.
危险品化学品经营许可证(带存储)