摘要
This study successfully synthesized bismuth ferrite (BFO) thin films co-doped with europium (Eu) and aluminum (Al) using the sol-gel method, while comprehensively investigating their performance characteristics. By systematically adjusting the Al doping ratio in Bi 0.98 Eu 0.02 Fe1 -x Al x O 3 (with x = 0, 0.01, 0.03, 0.05, 0.07), significant changes in the material properties were observed. XRD and Raman spectroscopy validated the presence of R 3 c and Pnma phases in the synthesized BFO thin films, which demonstrated excellent crystallinity. Microstructural and compositional assessments, performed using SEM and XPS, indicated that the BEFAO5 sample possessed high crystallinity and a relatively low oxygen vacancy content. These characteristics enhanced the exceptional current-voltage (J-V) properties and ferroelectric behavior of BEFAO5. Additionally, the influence of vacancy defects on the ferroelectric efficiency and durability of BFO ferrite thin films was examined. The results indicated that the co-doping approach significantly improved the material's resistance to aging. In summary, the combined doping of Eu and Al not only substantially modified the crystalline structure and physical attributes of BFO thin films but also markedly enhanced their potential for applications in energy storage and spintronic technologies.
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