Terminal Passivation–Induced Interface Decoupling for High-Stability Two-Dimensional Semiconductors

Two-dimensional (2D) materials, such as MoS 2 , show exceptional potential for next-generation electronics. However, the poor stability of these materials, particularly under long-term operations and high temperature, impedes their practical applications. Here, we develop a terminal passivation interface decoupling (TPID) strategy to significantly improve the stability of MoS 2 , by mitigating the interaction between the substrate and the 2D material within the in-situ growth process. Specifically, the strong electron-withdrawing terminal group hydroxyl, prevalent on the oxide substrate, is passivated by carbon groups. Due to this, the structure of MoS 2 materials remains stable during long-term storage, and its electronic devices, field-effect transistors (FETs), show remarkable operational and high-temperature (400°C) stability over 60 days, with much-improved performance. For example, mobility increases from 9.69 to 85 cm 2 /(V·s), the highest value for bottom-up transfer-free single crystal MoS 2 FETs. This work provides a new avenue to solve reliability issues of 2D materials and devices, laying a foundation for their applications in the electronic industry.