Enhanced efficiency of quasi-two-dimensional perovskite light-emitting diodes through the incorporation of a Ti3C2Tx-doped emissive layer

The recent attention accorded to perovskite light-emitting diodes (PeLEDs) can be attributed to their exceptional optoelectronic characteristics. In this paper, the perovskite emissive layer (EML) modified by two-dimensional material Ti 3 C 2 T x MXene was explored with the aim of improving the morphology of perovskite films and the luminescence efficiency of PeLEDs. A doping concentration of 0.2 mM Ti 3 C 2 T x yielded optimal results for the PeLEDs, with a maximum luminance of 8317 cd/m 2 and a maximum current efficiency (CE) of 6.63 cd/A, representing a 200 and 103% enhancement, respectively, in comparison to the reference device lacking Ti 3 C 2 T x . It has been evidenced that doping Ti 3 C 2 T x MXene plays the role of enhancing the morphology of perovskite films and passivating the defects present in these films. Furthermore, Ti 3 C 2 T x facilitates the exciton recombination efficiency, enhances the radiative recombination of the emissive layer and thus improves the optoelectronic efficiency of the PeLEDs. This work presents novel concepts for the utilization of MXene in PeLEDs.