Mn2+ doping induced deep traps in Ba0.75Al11O17.25: Eu2+ for optical data storage application

Photo-stimulated luminescence materials have shown significant potential in the field of information storage, but they still face critical challenges in the regulation of trap levels. Herein, Ba 0.75 Al 11 O 17.25 :Eu 2+ fluorescent ceramics with abundant deep traps (1.24 eV) were reported via selective Mn 2+ co-doping. This material exhibits a homogeneous and dense crystalline structure, and its narrow-band emission at 514 nm is attributed to the energy transfer of Eu-Mn. Thermoluminescence curves, X-ray photoelectron spectroscopy and electron paramagnetic resonance spectra confirm that the trap levels primarily arise from oxygen vacancies and Reidinger defects, and Mn 2+ doping suppresses the formation of shallow traps through charge compensation mechanism. Significantly, information writing and reading in the ceramic medium were achieve using 254 nm UV light and 980 nm NIR light or thermal stimulation. The excellent photo-stimulated luminescence properties and high read-write stability of Ba 0.75 Al 11 O 17.25 :Eu 2+ , Mn 2+ are expected to accelerate the development of the next generation of optical storage technology.