High infrared emissivity and heat dissipation ability of SiC/Edge-oxidized Graphene/ PVDF-HFP coatings near room temperature

High infrared emissivity and excellent thermal conduction capability are crucial for the heat dissipation performance of heat dissipation coatings, which are applicable in the thermal management of modern electronic components. Herein, SiC nanowires/Edge-oxidized graphene/polyvinylidene fluoride hexafluoropropylene (SiC NWs/EOG/PVDF-HFP) composite coatings with three-dimensional thermal conductivity network structure were successfully prepared by the in-situ growth of SiC NWs between EOG layers through high-temperature carbothermal reduction reaction. The out-of-plane thermal diffusivity of the SiC NWs/EOG/PVDF-HFP composite coating was increased by 27 %, as compared with that of the EOG/PVDF-HFP coating, which was originating from the enhanced phonon conduction in the vertical direction by the in-situ growth of SiC NWs. The stacking faults and twin crystals generated by SiC NWs, the structural defects introduced by EOG, and the multi-scale surfaces and interfaces introduced by EOG and SiC NWs have jointly improved the infrared emissivity, enabling the SiC NWs/EOG/PVDF-HFP composite coating achieved an emissivity of 0.92. The copper plate coated with SiC NWs/EOG/PVDF-HFP coating achieved a temperature drop benefit of 9.3 °C, increasing by 126 %, 93 % and 78 %, respectively, as compared with that of the copper plate coated with EOG/PVDF-HFP coating, the copper plate coated with mechanically compounded SiC/EOG/PVDF-HFP coating, and the copper plate coated with mechanically compounded SiC NWs-EOG/PVDF-HFP coating. These findings highlight the great potential of the SiC NWs/EOG/PVDF-HFP composite coatings for application in the thermal management of electronic devices.