Lightweight Bi-GdF3/Ti3C2Tx packaging aerogel with high electron radiation protection efficiency for MOSFET radiation hardening

Developing lightweight packaging materials with high radiation protection efficiency for MOSFET radiation hardening is highly significant for enhancing the radiation resistance of MOSFETs in space radiation environments. This work presented lightweight Bi-GdF 3 /Ti 3 C 2 T x aerogel (BGTA) with high electron radiation protection efficiency (RPE) through self-assembly and directional freezing. Subsequently, a radiation hardened MOSFET was obtained by packaging with BGTA. The resulting BGTA packaging material demonstrates excellent electron protection efficiency (92.23 %) compared to conventional Al packaging materials (23.80 %) at the same areal density. Meanwhile, the BGTA-packed MOSFET shows outstanding radiation resistance, exhibiting a much smaller negative threshold voltage drift value of 0.10 V compared to the Al-packed MOSFET (1.17 V). The electron shielding mechanism of BGTA was analyzed and elucidated by FASTRAD simulation on a micro scale. Due to the synergistic effect of the honeycomb aerogel structure and Bi/GdF 3 functional filler in BGTA aerogel, the incident electrons are effectively attenuated, thereby reducing radiation damage to the SiO 2 layer of the MOSFET and improving the radiation resistance of the MOSFET. Theoretical calculation results substantiate that the BGTA-packed MOSFET exhibits lower threshold voltage shifts and trapped charges. This work presents a lightweight and highly efficient MXene aerogel packaging material for MOSFET radiation hardening.