Enhanced broadband near-infrared luminescence in Cr3+-activated Gd2Ga1-2xZnxSixSbO7 phosphors for multifunctional applications

The rapid advancement of near-infrared (NIR) spectroscopy has spurred a significant demand for innovative broadband NIR phosphors. Here, a [Zn 2+ -Si 4+ ] → [Ga 3+ -Ga 3+ ] co-substitution strategy is designed to modify the local symmetry and crystal field environment of Cr 3+ in Gd 2 GaSbO 7 . Consequently, the luminescence experiences notable enhancement, broadening, and red-shifting under an irradiation of 460 nm light. The Gd 2 Ga 0.91 Zn 0.02 Si 0.02 SbO 7 :5%Cr 3+ phosphor demonstrates a broadband emission centered at 797 nm with a full-width at half maximum of 126 nm. Moreover, the NIR emission intensity retains 50.96% of the ambient value at 423 K. Ultimately, the as-obtained phosphor was successfully encapsulated into a blue chip to manufacture a NIR phosphor-converted light-emitting diode (pc-LED) with an NIR output power of 47.83 mW and a photoelectric efficiency of 10.70%. These results underscore the potential of Gd 2 Ga 1-2 x Zn x Si x SbO 7 :Cr 3+ as a high-performance material for advanced NIR spectroscopy applications.