摘要
The electronic conductivity of TiO 2 -based anodes was improved fundamentally by co-integrating the oxygen vacancy of TiO 2 into the homogeneous structure with cobalt doping. The results showed that the introduction of oxygen vacancies and Co expanded the lattice space, reduced the charge transfer resistance, and effectively increased the electronic conductivity and ionic transport. Density functional theory (DFT) calculations illustrated that Co doping resulted in a continuous distribution of electronic states at the Fermi energy level, which permitted the sample Co-A/R-TiO 2 to have enhanced metallic properties. The presence of abundant grain boundaries, interfacial and vacancy defects in the hollow microsphere anode all served as additional active sites for Li + storage. The Co-A/R-TiO 2 anode had a high reversible specific capacity of 443 mAh/g after 500 cycles at 0.5 C current density. The high capacity was mainly attributed to the synergistic effect of the perfect defect structure of the hollow spheres and the heterogeneous interfaces. This strategy of using defects combined with homo/heterojunction engineering could be extended to the design of other conventional semiconductor materials as energy storage electrodes.
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