Employing Sub-6 nm Rapid Self-Assembly Fluorinated Block Copolymeric Supramolecules at Low Temperature for Organic Synaptic Transistor Memories

As artificial synaptic transistor devices become increasingly important in simulating biological synaptic functions, it is crucial to design high-performance synaptic transistor memory using a facile and high-efficiency process. Herein, we demonstrate an organic synaptic transistor memory fabricated using poly(pentadecafluorooctyl methacrylate)-block-poly(4-vinylphenol) supramolecules with 1-aminopyrene (PPDFMA-b-(P4HS-APy)) as the polymer electret. The solution-processable PPDFMA-b-(P4HS-APy) can rapidly self-assemble into an ordered nanostructure with sub-6 nm domain size after annealing at a low temperature of 80 °C for only 10 min, which defines pyrene moieties into hydrophilic P4HS blocks surrounded by a hydrophobic and insulating PPDFMA matrix to form an effective electret. By optimizing the composition and tuning the nanostructure of the electret, a high-performance transistor device with a large memory window of 74 V, a high on/off current ratio of ∼105, and outstanding memory stability over 104 s was obtained. Additionally, a 6 × 6 synaptic transistor array was prepared, which exhibits good uniformity and can replicate versatile biological synaptic behaviors. Neuromorphic computing simulations constructed with the synaptic transistor reveal a high recognition accuracy of 91.6%. This study offers a strategy for preparing high-performance synaptic transistor devices using a facile and practical process.