摘要
Modulating the interface between the electron transport layer (ETL) and perovskite to minimize interfacial recombination is pivotal for developing efficient and stable perovskite solar cells. Here, we introduce an ultra-thin ZrO 2 insulating interface layer onto the inner surface of the mesoporous TiO 2 ETL via the chemical bath deposition in the zirconium n-butoxide solution, which alters the interface characteristics between TiO 2 and perovskite for the printable hole-conductor-free mesoscopic perovskite solar cells (p-MPSCs). The insulating ZrO 2 interface layer reduces interface defects and suppresses interfacial non-radiative recombination. Furthermore, the ZrO 2 interface layer improves the wettability of the mesoporous TiO 2 ETL, which favors the crystallization of perovskite within the mesoporous scaffold. Meanwhile, the device performance presents thickness dependence on the interface layer. While increased thickness improves the open-circuit voltage, excessive thickness negatively impacts both the short-circuit current density and fill factor. Consequently, an improved power conversion efficiency of 19.9% was achieved for p-MPSCs with the ZrO 2 interface layer at its optimized thickness.
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