Structure, electrical properties and temperature stability of Pb(In1/2Nb1/2)O3-BiScO3-PbTiO3 high-temperature piezoelectric ceramics

The development of piezoelectric ceramics combining high piezoelectric response with excellent temperature stability has become increasingly crucial for advanced applications. In this work, the relaxor ferroelectric Pb(In 1/2 Nb 1/2 )O 3 was incorporated into BiScO 3 -PbTiO 3 system and successfully synthesized as 0.05Pb(In 1/2 Nb 1/2 )O 3 -(0.95- x )BiScO 3 - x PbTiO 3 (PIN-BS- x PT) ceramics by the conventional solid-state reaction. Systematic characterization of phase structure, microstructure and electrical properties reveals the formation of a morphotropic phase boundary at x  = 0.59, which exhibits optimal electromechanical properties with piezoelectric coefficient d 33 = 522 pC/ N, Curie temperature T C = 402 °C and planar electromechanical coupling coefficient k p = 0.56. Remarkably, the PIN-BS-0.59PT ceramic demonstrates remarkable performance stability, achieving both high strain response (0.12 % at 20 kV/cm) and minimal temperature-dependent variation (13.5 % between 30 and 200 °C). Furthermore, the PIN-BS-0.59PT ceramic retains ～90 % of its initial d 33 value after annealing at 300 °C, demonstrating exceptional thermal depolarization resistance. These findings position PIN-BS- x PT ceramics as promising candidates for high-temperature piezoelectric applications.