Sm3+-doped InGaZnO4 phosphors: synthesis, optical properties, and application in latent fingerprint detection

A series of new phosphors, Sm 3+ -doped InGaZnO 4 (IGZO:Sm 3+ ), was synthesized using a high-temperature solid-state reaction method. The structures of IGZO:Sm 3+ samples belong to the R \(\overline{3 }\) m space group (No. 166). The excitation spectrum of IGZO:Sm 3+ showed an optimal excitation wavelength at 468 nm. Four distinct peaks were observed in the emission spectrum, with the most prominent peak appearing at 612 nm, corresponding to the 4 G 5/2 – 6 H 7/2 radiative transition of Sm 3+ ions. For effective optical performance, different doping levels were tested, and it was found that the composition IGZO:2 mol% Sm 3+ is the optimal one. The concentration quenching effect is caused by nearest neighbor ion interactions. In the temperature range of 300 to 480 K, the IGZO:Sm 3+ phosphor showed excellent thermal stability which is verified through luminous intensity behavior and the changes in Commission Internationale de l’Eclairage (CIE) chromaticity coordinates. The activation energy ( E a ) for IGZO:Sm 3+ was calculated to be 0.40 eV. Through powder dusting method, latent fingerprint (LFP) information can be deciphered at Level I–III feature. The optical properties, thermal stability and potential application in latent fingerprint development of IGZO:Sm 3 ⁺ were systematically investigated, which provides a new choice of materials and research ideas in related fields.