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Size-Dependent Quantum Confined Stark Effect in Quantum Dot Light-Emitting Diodes: An Electrically Excited Transient Absorption Study

Journal 2025 · IF 4.6 · 发表于 2025 年 4 月 6 日
作者: Xingzhi Wang,Jiahui Sun,Rui Guo,Zhijie Yan,Bo Li,Lei Wang,Huaibin Shen,Fengjia Fan
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摘要

The electric field-induced quantum confined Stark effect is an important factor that can affect the performance of quantum dot light-emitting diodes. However, probing this Stark effect in the operating quantum dot light-emitting diodes is still experimentally challenging using available characterization techniques. Herein we combine our self-developed electrically excited transient absorption spectroscopy with theoretical simulation to unveil the complex size dependence of the Stark effect in quantum dot light-emitting diodes. We found that the Stark effect-induced exciton quenching depends on both wave function confinement and the screening effect. Under reversed biases, the Stark–voltage relationship reveals that smaller quantum dots are less electric field-sensitive because of stronger wave function confinement; while under forward biases, larger quantum dots exhibit stronger electric-field screening and smaller equivalent bias because of more efficient carrier injection─with these intertwined factors, we observed the strongest electric field-induced exciton quenching in medium-size quantum dots.

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