摘要
Mixed-halide perovskite nanocrystals (PeNCs), such as CsPbBr x I 3-x , offer tunable emission and high photoluminescence quantum yield (PLQY) for pure red perovskite light-emitting diodes (PeLEDs). However, surface defects and phase instability, worsened by long-chain ligands, reduce stability and efficiency. A dual-strategy approach is developed by combining Mg 2 ⁺ doping with in situ 1,8-octanedithiol passivation to fabricate stable, efficient CsPbBr x I 3-x PeNCs films. Mg 2 ⁺ doping induces lattice contraction, suppresses iodine vacancies, and enhances phase stability. In situ 1,8-octanedithiol treatment, using ethyl acetate as a nonpolar antisolvent, replaces insulating ligands with short-chain HS − -terminated ligands, passivating defects. These PeNC films enable pure red PeLEDs with a 635 nm emission peak, an external quantum efficiency (EQE) of 24.2%, a luminance of 14406 cd m − 2 , and a half-life of 69 min at 1000 cd m − 2 , outperforming pristine PeNCs-based devices (EQE of 3.15%, T 50 of 12 min). This in situ strategy minimizes deposition-induced defects, offering a scalable route for high-performance PeLEDs in display technologies.
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