Humidity resistant room temperature H2S sensor via surface-adsorbed oxygen modulation of ReS2 nano-film

The concentration and type of surface-adsorbed oxygen are critical determinants of gas-sensing performance. Rhenium disulfide (ReS 2 ), a transition metal dichalcogenide (TMD) with a thickness-independent direct bandgap, has garnered considerable attention as a promising material for high-performance gas sensors due to its high carrier mobility and concentration. In this work, an improved rhenium-tellurium eutectic growth method for ReS 2 synthesis is proposed. Furthermore, the type and concentration of surface-adsorbed oxygen on the ReS 2 film were modulated through a combined approach of H 2 annealing and hydrogen peroxide (H 2 O 2 ) solution immersion. This surface modification strategy enabled the fabrication of an ReS 2 -based sensor exhibiting a low detection limit of 0.0219 ppm for hydrogen sulfide (H 2 S) and exceptional resistance to humidity interference, offering a novel route for the design of TMD-based gas sensors.