Rapid room-temperature NO2 detection based on Bi2S3/polyoxometalate heterostructures: The synergy of increased electron transportation and heterojunction effect

With the significant increase in global awareness of environmental protection, green non-toxic gas sensors have become an important tool to promote sustainable development. In this work, a gas sensor based on Bi 2 S 3 green non-toxic semiconductor material was successfully prepared. By introducing polyoxometalate (POMs) electron acceptor into Bi 2 S 3 sensing material, its detection ability for NO 2 gas was significantly improved. At room temperature (25 °C), the Bi 2 S 3 /1 %PW 12 sensor has a response value of 41.88 to 100 ppm NO 2 , which is 4.36 times the response value of the Bi 2 S 3 sensor (9.61), highlighting its excellent detection performance. In addition, we thoroughly evaluated the selectivity , repeatability and other key gas sensing parameters of the sensor, further confirming its high-potential in practical applications. Through analysis of the mechanism underlying the performance enhancement, it is found that the appropriate addition of PW 12 as an electron acceptor can effectively inhibit the electron-hole recombination, thus significantly improving the performance of the sensor. This important discovery opens up a new way and method for the performance optimization of gas sensors, and is expected to inject new vitality into the future development of gas sensor technology.