Innovative approaches to doping in zinc oxide films: The role of aluminum and tungsten in enhancing photoelectric properties

AZO films are regarded as a promising alternative to ITO due to their superior properties. However, excessive aluminum doping can lead to increased resistivity without enhancing carrier concentration. This study provides a systematic comparison between AZO and aluminum tungsten co-doped zinc oxide (AWZO) in terms of their preparation processes, which include powder synthesis, target sintering, and thin film sputtering. The investigation encompasses an analysis of the morphology, density, structure, and electrical properties of the sintered targets. The quality of the two sintered targets was assessed using RF magnetron sputtering, and the influence of pressure and sputtering power parameters on the films' properties was thoroughly examined. Additionally, the electrical and optical properties of the films were characterized and analyzed in detail. The experimental findings indicate that the AWZO target exhibits the lowest resistivity at 1.35 mΩ·cm. Furthermore, the AWZO film prepared at room temperature demonstrates a minimum sheet resistance of 52 Ω/□, an average transmittance of 91.59 %, and a band gap of 3.54 eV.