A significant enhancement in the luminescent properties of Ga2O3:Eu3+ phosphors induced by fluorine-doping

Building upon an anion doping strategy, this study proposes using F - regulation to enhance the luminescence performance of Ga 2 O 3 :Eu 3+ phosphors. To address the contradiction between the low Eu 3+ characteristic absorption and the strong Ga 2 O 3 intrinsic emission induced by charge transfer band (CTB) excitation in traditional Ga 2 O 3 :Eu 3+ systems, this study successfully prepared a series of Ga 2 O 3 :Eu 3+ /F - phosphors with different F - doping concentrations using an oleic acid-assisted solvothermal method combined with high-temperature sintering. The phases, morphology, structure, and luminescent properties of the samples were systematically analyzed. Experimental results show that F - successfully replaces part of the O 2- in the phosphor and alters the local symmetry of Eu 3+ , which results in 5 D 0 → 7 F 1 becoming the main transition path for the characteristic luminescence of Eu 3+ , shifting the main emission peak from 615 nm to 587 nm. Under CTB excitation, F - doping significantly enhanced the Eu 3+ characteristic emission without significantly altering the Ga 2 O 3 matrix emission. Under optimal reaction conditions, the luminescence intensity of the magnetic dipole transition in Ga 2 O 3 :Eu 3+ /F - phosphor was enhanced approximately 26-fold, with the quantum yield reaching 9.26% and the 5 D 0 excited state lifetime increasing to 1.83 ms. This modulation of the emission behavior also caused the phosphor chromaticity to shift from blue-purple to orange. This study demonstrates the selective enhancement mechanism of F - doping in Ga 2 O 3 :Eu 3+ luminescence, providing a reference for the design of high-performance rare-earth luminescent materials.