Matrix plainification leads to high thermoelectric performance in plastic Cu2Se/SnSe composites

Thermoelectric technology exhibits significant potential for power generation and electronic cooling. In this study, we report the achievement of exceptional thermoelectric performance and high plasticity in stable Cu 2 Se/SnSe composites. A novel matrix plainification strategy was employed to eliminate lattice vacancies within the Cu 2 Se matrix of the Cu 2 Se/SnSe composites, resulting in a marked improvement in carrier mobility and power factor. The presence of quasi-coherent interfaces induces phonon scattering, reducing lattice thermal conductivity without compromising carrier mobility. Consequently, a high figure of merit ( ZT ) of 3.3 was attained in the Cu 2 Se/5 wt.% Sn 0.96 Pb 0.01 Zn 0.03 Se composite. Additionally, the presence of high-density nanotwins imparts remarkable plasticity to the composite, yielding a compressive strain of 12%. The secondary phase contributes to the stability of the composite by hindering the extensive migration of Cu ions through bonding interactions. Our findings present a novel strategy for enhancing the thermoelectric performance of composite semiconductors, with potential applicability to other thermoelectric systems.