摘要
This study presents a novel electrochemical approach for fabricating ethoxy terminated diamond (EtO-diamond) surfaces through high-voltage ethoxide ion treatment in ethanol. Using X-ray photoelectron spectroscopy (XPS), we systematically characterized the voltage dependent surface chemistry, revealing a two-step grafting mechanism: hydrogen abstraction by ethoxy radicals followed by covalent bond formation, as evidenced by C O and CH x peaks. The applied voltage critically governs surface composition, high voltages induced competing pathways (e.g., sp 2 carbon formation). Comparative hydrogen ion treatment enhanced CH x groups and avoided sp 2 carbon formation, indicating minimal oxidation.
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