Enhanced thermoelectric performance in n-type PbSe via coherent interface through Cu2S alloying

N-type PbSe-based materials have emerged as a research focus in medium-to-high temperature thermoelectric applications due to their high carrier mobility, stability across wide temperature ranges, and cost-effectiveness. However, simultaneously maintaining high carrier mobility while reducing lattice thermal conductivity remains a critical challenge for PbSe-based materials. Research demonstrates that constructing coherent interfaces optimizes charge carrier scattering, thereby maintaining high carrier mobility while achieving thermal conductivity reduction. In this work, after Cu 2 S alloying treatment, coherent nanostructured precipitates consisting of Cu 2 S (monoclinic phase) and PbS (cubic phase) are formed at grain boundaries. The lattice mismatch at the interface is maintained below 4.5%, which consequently leads to only a marginal reduction in charge carrier mobility. Meanwhile, Cu 2 S, as a dynamic electron donor, increases the carrier concentration. Additionally, the diffusion of Cu + ions introduces lattice disorder, which, in combination with the low- to mid-frequency phonon scattering from the nano-precipitates, significantly reduces the lattice thermal conductivity. As a result, a ZT value of 1.53 is achieved at 773 K. The Pb 1.02 Se-0.5% Cu 2 S composite prepared in this study exhibits superior thermoelectric performance compared to most n-type PbSe-based materials, demonstrating that the introduction of coherent nanostructures constitutes an effective strategy for enhancing the thermoelectric properties of n-type PbSe.