摘要
As metal-containing resists attract increasing research interest in high-resolution lithography, gaining insights into the photochemical mechanisms, particularly in relation to the ligand functionality, is actively demanded. In this work, a controlled pair of organotin carboxylates with analogous structures but different functional groups has been designed and synthesized as deep-ultraviolet (DUV) resists. Both resists demonstrate 90 nm half-pitch resolution and the capability of pattern transfer on carbon-based hard-mask layers. Through various characterizations and comparison of the controlled pair, we propose two competitive reaction paths for the organotin system with olefin groups, which regulate the lithographic sensitivity and dissolution contrast. Our findings highlight the structural adjustability of organotin carboxylates and their potential application as high-resolution and etch-durable DUV resists.
危险品化学品经营许可证(带存储)