Boosted photoelectrochemical water splitting activity by construction of a novel FeVO4/AgVO3 p-n heterostructure

FeVO 4 is recognized as a potential photoelectrode material on account of its relatively narrow bandgap and suitable conduction and valence band positions. However, its photoelectrochemical water splitting performance remains unsatisfactory owing to rapid carrier recombination and poor charge transport capabilities. Herein, a novel p-n FeVO 4 /AgVO 3 heterostructure photoanode was developed by depositing p-type AgVO 3 nanowires onto n-type FeVO 4 nanoporous structures, boosting the PEC properties of the base material. The incorporated AgVO 3 nanostructures enhance light absorption in the visible spectrum, facilitate effective electron-hole separation through optimized interfacial charge transport pathways, and simultaneously extend the carrier lifetime. The built-in electric field in the p-n heterostructure promotes more effective separation and directional motion of photoinduced charge carriers. As a result, the transient photocurrent density of the FeVO 4 /AgVO 3 heterojunction photoanode reaches 0.22 mA cm −2 , which is 3.35 times that of bare FeVO 4 (0.06 mA cm −2 ). Notably, the incorporation of AgVO 3 nanowires significantly improves the photostability of the FeVO 4 photoanode. This work provides a feasible strategy from the perspective of interface engineering for designing high-performance FeVO 4 -based photoelectrodes to enhance photoconversion efficiency.