Influence of anodization parameters on electrochemical friction and wear behavior of 4H-SiC wafers

This paper systematically investigates the effects of anodic oxidation parameters on the electrochemical tribological behavior of 4H-SiC wafers. Material removal characteristics are quantitatively characterized via coefficient of friction (COF) curves, wear morphologies, and wear areas. Results show that the electric field significantly reduces COF and enhances material removal rate. Increasing voltage alters silicon carbide (SiC) surface oxidation characteristics, triggering abrupt COF changes. Silica abrasives reduce wear on Si 3 N 4 grinding balls, further lowering the average COF while increasing its fluctuations. The material removal efficiency of 150 nm and 100 nm SiO 2 abrasives increases by 17.5 times and 7.9 times, respectively, compared to the abrasive-free condition.