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Realizing Bi-doped α-Cu2Se as a promising near-room-temperature thermoelectric material

Journal 2019 · IF 8.355 · 发表于 2019 年 4 月 13 日
作者: Wang-Wei Liao,Lei Yang,Jie Chen,Da-Li Zhou,Xian-lin Qu,Kun Zheng,Guang Han,Jia-Bei Zhou,Min Hong,Zhi-Gang Chen
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摘要

Copper selenide (Cu 2 Se) has been extensively studied as an eco-friendly thermoelectric candidate owing to the outstanding thermoelectric performance of its high-temperature β-phase. In this study, we propose that α-Cu 2 Se is also a promising thermoelectric material at near-room-temperature. We synthesize nanostructured Cu 2-x Se via a facile solvothermal method, and densify the samples using Spark Plasma Sintering to maintain the small grain sizes. Although the as-prepared α-Cu 2 Se has intrinsically low lattice thermal conductivity , its high Cu deficiency leads to a high carrier concentration, therefore, a low thermoelectric performance. As an electron donor, bismuth can effectively compress the Cu vacancies of the as-prepared α-Cu 2 Se and in turn reduce its carrier concentration from 4.1 × 10 20 to 2.0 × 10 20 cm −3 at room temperature, achieving a significantly enhanced power factor and a reduced carrier thermal conductivity. Consequently, a zT of 0.43 at 373 K is obtained in Cu 1.982 Bi 0.006 Se, showing great potential in developing high-performance near-room-temperature α-Cu 2 Se-based thermoelectric materials.