摘要
Elemental-doped is considered as an effective strategy to modulate the electronic structure of Metallic MoS 2 (i.e., 1T-MoS 2 ) and enhance its electrochemical performance. Herein, DFT is applied to predict the electronic structure of different transition metals (TMs) doped 1T-MoS 2 . Based on the results, stable Ni-doped 1T-MoS 2 (N 3 MS) is synthesized in a propionic acid (PA) aided system. Electrochemical tests show that N 3 MS possesses an excellent specific capacitance of 2461.2 F·g −1 at 1 A·g −1 and a cycle retention rate of 85.67 % at 10 A·g −1 for 1000 cycles due to the critical contribution of Ni-doped to electronic structure modulation. Meanwhile, in-situ Raman measurements show that the active sites of N 3 MS are Mo 3+ and Ni 2+ . The assembled N 3 MS//ZnO/ZnS-C hybrid device shows a specific capacitance of 242.28 F·g −1 at 1 A·g −1 , an excellent energy density of 65.96 Wh·kg −1 at the power density of 700 W·kg −1 and the excellent stability for up to 2000 cycles (77.26 % retention at 5 A·g −1 ). This work proves the significant contribution of elemental doping to modulate electronic structures and improve electrochemical performance.
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