摘要
Indium (In)-based perovskites have become promising benign alternatives of lead halide perovskites due to their considerable stability, less toxicity and highly luminescence efficiency. Herein, the highly efficient and stable red-emitting Sb-doped In-based perovskites were synthesized via anionic component engineering. The as-synthesized Sb:Cs 2 InClBr 4 ·H 2 O crystals gave a wide emission band at 680 nm from self-trapped excitons with an extraordinary high photoluminescence quantum yield of 93% due to the modified charge-transfer energy and distorted lattice enhanced electron-phonon coupling by Br - ions incorporation. In addition, the Sb:Cs 2 InClBr 4 ·H 2 O crystals also exhibited excellent thermal stability, which could facilitate their applications. In addition, a cool white light-emitting diode with high brightness was manufactured by using this product, with some other luminescent QDs. These results demonstrate the applicability and processibility of anionic component engineering in the synthesis of highly efficient and tunable emitting In-based perovskites, which would promote their application in optoelectronic devices.
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