摘要
All-inorganic cesium lead bromide (CsPbBr 3 ) perovskite solar cells have been attracting growing interest due to superior performance stability and low cost. However, low light absorbance and large charge recombination at TiO 2 /CsPbBr 3 interface or within CsPbBr 3 film still prevent further performance improvement. Herein, we report devices with high power conversion efficiency (9.16%) by introducing graphene oxide quantum dots (GOQDs) between TiO 2 and perovskite layers. The recombination of interfacial radiation can be effectively restrained due to enhanced charge transfer capability. GOQDs with C-rich active sites can involve in crystallization and fill within the CsPbBr 3 perovskite film as functional semiconductor additives. This work provides a promising strategy to optimize the crystallization process and boost charge extraction at the surface/interface optoelectronic properties of perovskites for high efficient and low-cost solar cells.
危险品化学品经营许可证(带存储)