Modified polybutene-1 film with high dielectric constant based on low doping amount of fluorine-based compound

In this paper, a C8 perfluoroacrylate/polybutene-1 composite film was prepared by solution casting method. Analysis by FTIR, XRD and SEM shows that C8 perfluoroacrylate has been successfully and uniformly integrated into the matrix polybutene-1, and the crystal structure of the matrix polybutene-1 remains intact without any change. When the content of the filler is very low, local structural changes can occur, resulting in an increase in dielectric constant and breakdown field strength , and can reduce conduction losses at high frequencies. Therefore, at room temperature, when f = 1kHz and the filler content is 0.2wt%, the dielectric constant of the composite film ε = 12.81, which is nearly 620 % higher than that of the pure PB-1 film ( ε = 1.78), and the dielectric loss still remains in tan σ = 0.011, and the composite film storage performance as well as the most excellent U e = 8.65 J/cm 3 , which is 8.5 times the energy storage density of the pure PB-1 material ( U e = 1.02 J/cm 3 ). The composite materials in this work show excellent properties such as high dielectric constant, low dielectric loss, and high breakdown field strength, which are prospective in the application of capacitors.