Ultrasensitive UV-NIR broadband phototransistors based on AgBiS2–organic hybrid films

In recent years, AgBiS2 has received great attention in optoelectronics thanks to its fascinating merits, including a suitable bandgap, large absorption coefficient from ultraviolet to near-infrared and remarkable material stability. However, the poor carrier transport properties limit its further development and applications. To address this issue, we propose a composite strategy to facilitate the carrier transport of AgBiS2 QD films. The AgBiS2–organic hybrid films demonstrated enhanced photoconductivity. Then, we fabricated phototransistors based on these blend films, and achieved a high photosensitivity (Ilight/Idark) of 1.5 × 103, a decent responsivity of up to 20 A W−1, an excellent specific detectivity of 4 × 1013 Jones under low UV illumination and remarkable device stability. These results again demonstrate the great potential of AgBiS2 for next generation solution-processed photodetectors.