Design of Schottky barriers in ZnO–TiC interface and its application in high sensitivity detection of aniline

The Schottky barrier at the interface between the semiconductor phase and the metal phase has excellent rectification effect which can greatly facilitate the formation of the electron accumulation region. The interface electronic modulation can promote the formation of electron depletion layer in the gas sensing process, which is a powerful strategy to improve the sensing performance. In this work, ZnO–TiC composites were successfully prepared. XRD, TEM, BET and XPS characterizations of the ZnO–TiC composites were proformed to investigate the compositions and structures. The as-synthesized samples were applied to fabricate gas sensors to investigate their gas sensing performance. Compared to pure ZnO and TiC, the composites achieved high sensitivity (232 for 100 ppm aniline) and linear detection ( R 2 = 0.986) of aniline. The improvement of sensor performance is mainly attributed to the electronic modulation of Schottky barrier at the interface between ZnO and TiC. Our results indicate that the construction of ZnO-TiC Schottky barrier is a promising strategy for enhancing the performance of gas sensors.