Oxygen defect related high temperature dielectric relaxation behavior in (Ba,La)(Zr,Sn,Ti)O3 ceramics

Ferroelectric materials with the typical perovskite structure are widely used in capacitors, ultrasonic devices, oil drilling, transducers, and other fields. Lead-lanthanum-zirconium-titanate ceramics co-doped with Sn and Ba , have been widely investigated. However, there is little attention has been focused on the dielectric properties of barium-lanthanum-zirconium-titanate. Thus, in this work, Sn doped Ba 0.955 La 0.03 Zr 0.02 Ti 0.98 O 3 ferroelectric ceramics were prepared via a classical high-temperature solid state reaction. Scanning Electron Microscopy (SEM) was used to observe the surface appearance of ceramics. The X-ray diffraction (XRD) patterns at room temperature, indicate that the ceramics are well crystallized. Impedance properties and dielectric properties reflect the characteristic of typical high temperature dielectric relaxation behavior. The conductive activation energy and the relaxation activation energy are obtained through the calculation of the Arrhenius law. The fitting results show that the dielectric relaxation behavior at high-temperature, was related to the oxygen defect. The electrical modulus verified the partial short-range carrier migration, also contribute to the high-temperature dielectric properties.