摘要
Thermoelectric materials can directly convert heat and electricity, which is a kind of promising energy material. In view of cost and mechanical properties, polycrystalline SnSe material with highzTvalue is greatly desired. In this study, polycrystalline Sn0.94Pb0.01Se1-xTexsamples were prepared by the vacuum melting–hot pressing sintering method. Sn vacancies, Pb and Te atoms were simultaneously introduced into the polycrystalline SnSe. The power factor of Sn0.94Pb0.01Se1-xTexsamples was decreased, which could be attributed to the generation ofn-type semiconductor SnSe2. In addition, the phonons were strongly scattered by point defects and dislocations, which led to the decrease of thermal conductivity—from 0.43 Wm−1K−1to 0.29 Wm−1K−1at 750 K. Finally, the polycrystalline Sn0.94Pb0.01Se0.96Te0.04sample achieved the maximumzTvalue of 0.60 at 750 K.Keywords:SnSe;nanoparticles;zT;thermoelectric;TEM
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