Effects of Ambient Gases on the Electrical Performance of Solution-Processed C8-BTBT Thin-Film Transistors

We performed a systematic study of the influence of environmental conditions on the electrical performance characteristics of solution-processed 2,7-dioctyl [1] benzothieno[3,2-b][1]-benzothiophene (C8-BTBT) thin-film transistors (TFTs). Four environmental exposure conditions were considered: high vacuum (HV), O 2 , N 2 , and air. The devices exposed to O 2 and N 2 for 2 h performed in a manner similar to that of the device kept in HV. However, the device exposed to air for 2 h exhibited significantly better electrical properties than its counterparts. The average and highest carrier mobility of the 70 air-exposed C8-BTBT TFTs were 4.82 and 8.07 cm 2 V -1 s -1 , respectively. This can be compared to 2.76 cm 2 V -1 s -1 and 4.70 cm 2 V -1 s -1 , respectively, for the 70 devices kept in HV. Furthermore, device air stability was investigated. The electrical performance of C8-BTBT TFTs degrades after long periods of air exposure. Our work improves knowledge of charge transport behavior and mechanisms in C8-BTBT OTFTs. It also provides ideas that may help to improve device electrical performance further.