Antiferroelectric thick film grown on metal foils with fast discharge speed and excellent energy-storage properties

Antiferroelectric (AFE) Pb 0.94 La 0.04 Zr 0.97 Ti 0.03 O 3 (PLZT) thick film was successfully fabricated on nickel foils by using sol–gel method. The film exhibits dense microstructure with low surface roughness and pure perovskite phase. It displays high dielectric constant of 433 at 100 kHz and room temperature, which is 28% larger than that on traditional silicon substrate. Calculated by polarization-field (P–E) hysteresis loop, the recoverable energy-storage density (W rec ) of 18.4 J/cm 3 and the efficiency (Ƞ) value of 54% at 1400 kV/cm are obtained in the thick film. Measured by resistance–inductance–capacitance (RLC) circuit, the maximum pulsed discharge energy-storage density (W dis ) of 12.4 J/cm 3 is found at the same electric field of 1400 kV/cm. Moreover, 90% of the energy is released in a short time of about 84 ns, displaying super-fast discharging characteristic. The AFE film with high discharge energy-storage density and fast discharge time provides strong potential for the application in modern electronics and electrical power systems.