Protocol for doping of an Sn-based two-dimensional perovskite semiconductor by incorporating SnI4 for field-effect transistors and thermoelectric devices

Summary Doping is an important technique for semiconductor materials, yet effective and controllable doping of organic-inorganic halide perovskites is still a challenge. Here, we present a protocol to dope 2D perovskite (PEA) 2 SnI 4 by incorporating SnI 4 in the precursor solutions. We detail steps for preparation of field-effect transistors (FETs) and thermoelectric devices (TEs) based on SnI 4 -doped (PEA) 2 SnI 4 films. We further describe characterization via conductivity measurement using the four-point probe method, FETs performance, and TEs performance measurements. For complete details on the use and execution of this protocol, please refer to Liu et al. (2022). 1