Thin Indium-Tin-Oxide Film Produced Through Sol–Gel Method with Its Morphological and Electrical Properties

Indium-tin-oxide (ITO) thin film was usually produced on quarts glass in 25–150 nm thickness by various techniques. In this research, we prepared ITO thin film on substrate of silicon wafer by sol–gel method, measured by step profiler to be 20 nm. By reducing the organic components in the samples, and through investigation of TG/DTA/DTG, it is concluded that the ITO film reached the peak of recrystallization at 533 °C. The ITO thin film had the spectral responsivity of 5.6 A/W and strongest laser absorbance both at 450 nm wavelength, which can be concluded through photocurrent response and I–V curing.