摘要
The data storage performance, stability and reliability of the graphene memories have advanced significantly towards practical information storage applications. Using highly dispersed 4-bromobenzene functionalized RGO (BB-RGO) as two dimensional template, a new poly[(1,4-diethynylbenzene)- alt -boron dipyrro-methene]-grafted reduced graphene oxide (PDBD- g -RGO) was synthesized via Sonogashira coupling reaction. Covalent grafting of PDBD onto BB-RGO gives rise to a 34-cm −1 blue shift of the D band and a 7-cm −1 red shift of the G band when compared to the Raman spectrum of BB-RGO. A transparent and flexible nonvolatile memory device with configuration of Al/PDBD- g -RGO/ITO-coated poly(ethylene terephthalate) (PET) exhibited typical storage performance of rewritable memory that can be electrically erased and reprogrammed, with turn-on and turn-off voltages of 1.55 and −1.80 V, and an ON/OFF current ratio exceeding 10 5 . The memory behaviors of the flexible device were almost unchanged under the bending test .
危险品化学品经营许可证(带存储)