摘要
Inorganic semiconductor nanocrystals (NCs) are considered potential emitters for next-generation displays due to their special quantum size confinement effect. Herein, Cd-free AgInZnS (AIZS) NCs were produced via the cation exchange reaction from AgIn5S8 NCs for light-emitting diodes as green emitters. AIZS NC-based light-emitting diodes showed a maximum current efficiency of 6.34 cd/A and an external quantum efficiency of 1.3%, which are the highest values for AIZS NC-based light-emitting diodes for green emitters so far. The composition of AIZS NCs produced with different ligands can vary the band gap structure of AIZS NCs, affecting the balance of charge injections in the device to induce different performances of AIZS NC-based light-emitting diodes.
危险品化学品经营许可证(带存储)