摘要
A series of high-k Ba 4 Nd 28/3 Ti 18- y Ga 4 y /3 O 54 (0≤ y ≤2, BNTG) ceramics with temperature stable and ultra-low dielectric loss were synthesized via the conventional solid-state reaction. The main phase of all BNTG ceramics demonstrated an orthorhombic tungsten-bronze structure, but the impurity phase (gallium-rich phase) was found in BNTG ( y = 2) ceramic. Partial substitution of Ga 3+ for Ti 4+ in B-site was a valid method to improve the temperature stability and dielectric loss of BNTG ceramics. The variation of ε r values of BNTG ceramics was dominated by the ionic polarizability. The ultra-low dielectric loss (ultra-high Q × f values) was associated with grain size, suppression of Ti 3+ and impurity phase. The decrease of TCF values was highly dependent on the tilting of Ti-O octahedra and impurity phase. Finally, outstanding combination dielectric characteristics were achieved for BNTG microwave ceramics at y = 1.5 ( ε r = 72.8, Q × f = 14,600 GHz, TCF=+4.1 ppm/°C) and at y = 2 ( ε r = 70.3, Q × f = 15,500 GHz, TCF=+3.9 ppm/°C).
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